Memory block select circuitry including voltage bootstrapping control

ABSTRACT

Some embodiments include apparatuses, and methods of operating the apparatuses. Some of the apparatuses include a first memory cell string; a second memory cell string; a first group of conductive lines to access the first and second memory cell strings; a second group of conductive lines; a group of transistors, each transistor of the group of transistors coupled between a respective conductive line of the first group of conductive lines and a respective conductive line of the second group of conductive lines, the group of transistors having a common gate; and a circuit including a first transistor and a second transistor coupled in series between a first node and a second node, the first transistor including a gate coupled to the second node, and a third transistor coupled between the second node and the common gate.

BACKGROUND

Memory devices are widely used in computers, cellular phones, and manyother electronic items. A conventional memory device, such as a flashmemory device, has many memory cells to store information. During amemory operation, different voltages are used. Such voltages can have arelatively high voltage value during some memory operations of thememory device. As described in more detail below, such a high voltagevalue may cause stress and increase power consumption in someconventional memory devices.

BRIEF DESCRIPTION OF THE DRAWINGS

The techniques described herein relate to controlling values of voltagesused in a memory device during memory operations of the memory device.The described memory device includes a first memory cell string; asecond memory cell string; a first group of conductive lines (e.g.,local word lines) to access the first and second memory cell strings; asecond group of conductive lines (e.g., global word lines); and a groupof transistors (e.g., string driver transistors). Each transistor of thegroup of transistors is coupled between a respective conductive line(e.g., a local word line) of the first group of conductive lines and arespective conductive line (e.g., a global word line) of the secondgroup of conductive lines. The group of transistors have a common gate(e.g., a control gate shared by the transistors). The described memorydevice also includes and a circuit, which includes a first transistor, asecond transistor, and a third transistor. The first and secondtransistors are coupled in series between a first node and a secondnode. The first transistor includes a gate coupled to the second node.The third transistor is coupled between the second node and the commongate of the group of transistors. The described memory device alsoincludes capacitor structures that can be used in the circuit duringmemory operations of the memory device.

FIG. 1 shows a block diagram of an apparatus in the form of a memorydevice, according to some embodiments described herein.

FIG. 2 shows a schematic diagram of a portion of a memory deviceincluding blocks of memory cells, driver circuits, and driver selectcircuits, according to some embodiments described herein.

FIG. 3 shows a schematic diagram of a driver select circuit of thememory device of FIG. 2, according to some embodiments described herein.

FIG. 4 is a timing diagram for some of the signals of the memory deviceof FIG. 2 and some of the voltages shown in FIG. 3 during an examplewrite operation of the memory device, according to some embodimentsdescribed herein.

FIG. 5 shows a schematic diagram of a driver select circuit that can bea variation of the driver select circuit of FIG. 3, according to someembodiments described herein.

FIG. 6 is a timing diagram for some of the signals of the memory deviceof FIG. 2 and some of the voltages shown in FIG. 5 during an examplewrite operation of the memory device, according to some embodimentsdescribed herein.

FIG. 7 shows a structure of a portion of a memory device including astructure of a capacitor of a driver select circuit of the memorydevice, according to some embodiments described herein.

FIG. 8 shows a structure of a portion of another memory device includinga structure of a capacitor of a driver select circuit of the memorydevice, according to some embodiments described herein.

DETAILED DESCRIPTION

FIG. 1 shows a block diagram of an apparatus in the form of a memorydevice 100, according to some embodiments described herein. Memorydevice 100 can include a memory array (or multiple memory arrays) 101containing memory cells 102 arranged in blocks (blocks of memory cells),such as blocks 190 and 191. In the physical structure of memory device100, memory cells 102 can be arranged vertically (e.g., stacked overeach other in a 3D arrangement) over a substrate (e.g., a semiconductorsubstrate) of memory device 100. Alternatively, memory cells 102 can bearranged horizontally (e.g., in a planar or 2D arrangement) over asubstrate of memory device 100. FIG. 1 shows memory device 100 havingtwo blocks 190 and 191 as an example. Memory device 100 can have morethan two blocks (e.g., hundreds or thousands of blocks).

As shown in FIG. 1, memory device 100 can include access lines(conductive lines that can include word lines) 150 and data lines(conductive lines that can include bit lines) 170. Access lines 150 cancarry signals (e.g., word line signals) WL0 through WLm. Data lines 170can carry signals (e.g., data signals) BL0 through BLn. Memory device100 can use access lines 150 to selectively access memory cells 102 ofblocks 190 and 191, and data lines 170 to selectively exchangeinformation (e.g., data) with memory cells 102 of blocks 190 and 191.

Memory device 100 can include an address register 107 to receive addressinformation (e.g., address signals) ADDR on lines (e.g., address lines)103. Memory device 100 can include row access circuitry 108 and columnaccess circuitry 109 that can decode address information from addressregister 107. Based on decoded address information, memory device 100can determine which memory cells 102 of which of blocks 190 and 191 areto be accessed during a memory operation.

Row access circuitry 108 can include driver circuits (e.g., word linedrivers) 140 and driver select circuits 145. Examples of driver circuits140 and driver select circuits 145 are described in more detail withreference to FIG. 2 through FIG. 8. During memory operations of memorydevice 100 in FIG. 1, driver circuits 140 can operate (e.g., operate asswitches) to form (or not to form) conductive paths (e.g., currentpaths) between respective access lines 150 and nodes (or lines) thatprovide voltages to access lines 150. Driver select circuits 145 canoperate to selectively activate (and deactivate) driver circuits 140depending on which of the blocks (e.g., block 190 or 191) of memorydevice 100 is selected to be accessed during a particular memoryoperation of memory device 100.

Memory device 100 can perform a read operation to read (e.g., sense)information (e.g., previously stored information) from memory cells 102of blocks 190 and 191, or a write (e.g., programming) operation to store(e.g., program) information in memory cells 102 of blocks 190 and 191.Memory device 100 can use data lines 170 associated with signals BL0through BLn to provide information to be stored in memory cells 102 orobtain information read (e.g., sensed) from memory cells 102. Memorydevice 100 can also perform an erase operation to erase (e.g., clear)information from some or all of memory cells 102 of blocks 190 and 191.

Memory device 100 can include a control unit 118 that can be configuredto control memory operations of memory device 100 based on controlsignals on lines 104. Examples of the control signals on lines 104include one or more clock signals and other signals (e.g., a chip enablesignal CE#, a write enable signal WE#) to indicate which operation(e.g., read, write, or erase operation) memory device 100 is to perform.

Memory device 100 can include sense and buffer circuitry 120, which caninclude components such as sense amplifiers and page buffer circuits(e.g., data latches). Sense and buffer circuitry 120 can respond tosignals BL_SEL0 through BL_SELn from column access circuitry 109. Senseand buffer circuitry 120 can be configured to determine (e.g., bysensing) the value of information read from memory cells 102 (e.g.,during a read operation) of blocks 190 and 191 and provide the value ofthe information to lines (e.g., global data lines) 175. Sense and buffercircuitry 120 can also be configured to use signals on lines 175 todetermine the value of information to be stored (e.g., programmed) inmemory cells 102 of blocks 190 and 191 (e.g., during a write operation)based on the values (e.g., voltage values) of signals on lines 175(e.g., during a write operation).

Memory device 100 can include input/output (I/O) circuitry 117 toexchange information between memory cells 102 of blocks 190 and 191 andlines (e.g., I/O lines) 105. Signals DQ0 through DQN on lines 105 canrepresent information read from or to be stored in memory cells 102 ofblocks 190 and 191. Lines 105 can include nodes within memory device 100or pins (or solder balls) on a package where memory device 100 canreside. Other devices external to memory device 100 (e.g., a memorycontroller or a processor) can communicate with memory device 100through lines 103, 104, and 105. For example, a controller (e.g., amemory controller or a processor) can send commands (e.g., read, write,and erase commands) to memory device 100 to cause memory device 100 toperform memory operations described herein with respect to FIG. 1through FIG. 8.

Memory device 100 can receive voltages (e.g., supply voltages) Vcc andVss. Voltage Vcc can have a positive value (e.g., Vcc>0V). Voltage Vsscan operate at a ground potential (e.g., Vss=0V). Voltage Vcc caninclude an external voltage supplied to memory device 100 from anexternal power source such as a battery, or alternatively fromalternating current to direct current (AC-DC) converter circuitry.

Memory device 100 can include a voltage generator 177 to generatedifferent voltages (not labeled in FIG. 1) and provide the generatedvoltages at outputs 178. The voltages at outputs 178 can be used duringdifferent memory operations of memory device 100. Voltage generator 177can include circuit components (e.g., charge pumps) to generate voltagesthat can have different values, and such values can be greater than (orless than) the value of voltage Vcc. The voltages at outputs 178 can besimilar to (or identical to) the voltages described below with referenceto FIG. 2 through FIG. 8.

In FIG. 1, each of memory cells 102 can be programmed to storeinformation representing a value of at most one bit (e.g., a singlebit), or a value of multiple bits such as two, three, four, or anothernumber of bits. For example, each of memory cells 102 can be programmedto store information representing a binary value “0” or “1” of a singlebit. A cell capable of storing a single bit is sometimes called asingle-level cell (or “SLC”). In another example, each of memory cells102 can be programmed to store information representing a value formultiple bits, such as one of four possible values “00”, “01”, “10”, and“11” of two bits, one of eight possible values “000”, “001”, “010”,“011”, “100”, “101”, “110”, and “11” of three bits, or one of othervalues of another number of multiple bits. A cell that has the abilityto store multiple bits is sometimes called a multi-level cell (ormulti-state cell). In some contexts in the industry, the termmulti-level cell (or MLC) is used to refer to a memory cell that canstore two bits of data per cell (e.g., one of four programmed states),the term triple-level cell (TLC) is used to refer to a memory cell thatcan store three bits of data per cell (e.g., one of eight programmedstates), and the term quad-level cell (QLC) is used to refer to a cellthat can store four bits of data per cell (e.g., one of sixteenthprogrammed states). For purposes of the present description, unlessexpressly indicated otherwise, the term multi-level cell (or MLC) willbe used in the broader context to refer to a memory cell that can storetwo or more bits of data per cell. Thus, the term multi-level cell isgeneric to both triple level cells, quad level cells, and future memorycell configurations capable of storing more than four bits of data percell.

Memory device 100 can include a non-volatile memory device, and memorycells 102 can include non-volatile memory cells, such that memory cells102 can retain information stored thereon when power (e.g., voltage Vcc,Vss, or both) is disconnected from memory device 100. For example,memory device 100 can be a flash memory device, such as a NAND flash(e.g., 3-dimensional (3-D) NAND) or a NOR flash memory device, oranother kind of memory device, such as, by way of example but notlimitation, a variable resistance memory device (e.g., a phase changememory device (of various configurations), a resistive Random AccessMemory (RAM) device, or a magnetoresistive random-access memory (MRAM)device. For purposes of the present description, the device will bedescribed in the context of a NAND flash memory device.

One of ordinary skill in the art may recognize that memory device 100may include other components, several of which are not shown in FIG. 1so as not to obscure the example embodiments described herein. At leasta portion of memory device 100 can include structures and performoperations similar to or identical to the structures and operations ofany of the memory devices described below with reference to FIG. 2through FIG. 8.

FIG. 2 shows a schematic diagram of a portion of a memory device 200including blocks (blocks of memory cells) 290 and 291, driver circuits240 ₀ and 240 ₁, and driver select circuits 245 ₀ and 245 ₁, accordingto some embodiments described herein. Memory device 200 can correspondto memory device 100 of FIG. 1, such that blocks 290 and 291 cancorrespond to blocks 190 and 191, respectively, of FIG. 1, drivercircuits 240 ₀ and 240 ₁ can correspond to driver circuits 140 of FIG.1, and driver select circuits 245 ₀ and 245 ₁ can correspond to driverselect circuits 145 of FIG. 1.

As shown in FIG. 2, blocks 290 and 291 can have similar elements. Thus,for simplicity, similar elements between blocks 290 and 291 are giventhe same labels (e.g., same reference numbers). The followingdescription focuses on the description of block 290. The elements ofblock 291 can have a similar description (which is not described indetail below for simplicity).

Block 290 can include memory cells 210, 211, 212, and 213, selecttransistors (e.g., source select transistors) 261, and selecttransistors (e.g., drain select transistors) 264. Memory cells 210, 211,212, and 213 can be arranged in respective memory cell strings, such asmemory cell strings 230, 231, and 232 in the depicted example shown inFIG. 2. Memory device 200 can include a line 299 that can carry a signalSRC (e.g., source line signal). Line 299 can be structured as aconductive region (e.g., a conductive line) that can form part of asource (e.g., a source line) shared by blocks 290 and 291 of memorydevice 200.

As shown in FIG. 2, memory device 200 can include data lines (e.g., bitlines) 270, 271, and 272 that can carry signals (e.g., data signals)BL0, BL1, and BL2, respectively. Data lines 270, 271, and 272 cancorrespond to some of data lines 170 of FIG. 1. Each of memory cellstrings 230, 231, and 232 of block 290 can be coupled to one of datalines 270, 271, and 272 through one of select transistors 264. Each ofmemory cell strings 230, 231, and 232 of block 290 can also be coupledto line 299 through one of select transistors 261. For example, memorycell string 230 of block 290 can be coupled to data line 270 throughselect transistor 264 (directly over memory cell string 230) and to line299 through select transistor 261 (directly under memory cell string230). In another example, memory cell string 231 of block 290 can becoupled to data line 271 through select transistor 264 (directly overmemory cell string 231) and to line 299 through select transistor 261(directly under memory cell string 231).

FIG. 2 shows an example of three memory cell strings 230, 231, and 232,and four memory cells 210, 211, 212, and 213 in each memory cell stringof block 290 (and block 291). However, the number of memory cell stringsand the number of memory cells in each memory cell string of block 290can vary.

As shown in FIG. 2, memory device 200 can include sense and buffercircuitry 220 coupled to data lines 270, 271, and 272. Sense and buffercircuitry 220 of memory device 200 can operate (e.g., during a readoperation) to sense information read from memory cells 210, 211, 212,and 213 of a block (e.g., block 290 or 291) being accessed (e.g., aselected block). Sense and buffer circuitry 220 can also operate (e.g.,during a write operation) to provide information to be stored in memorycells 210, 211, 212, and 213 of a block (e.g., block 290 or 291) beingaccessed (e.g., a selected block).

Memory device 200 can include a group of conductive lines (e.g., localaccess lines, such as, for example local word lines) 250 ₀, 251 ₀, 252₀, and 253 ₀ in block 290. Some memory cells (e.g., memory cells in thesame row) of different memory cell strings of the same block can becoupled to and controlled by (e.g., can share) the same conductive lineof that block. For example, memory cells 213 of block 290 can be coupledto and controlled by (e.g., can share) the same conductive line (e.g.,253 ₀). In another example, memory cells 212 of block 290 can be coupledto and controlled by (e.g., can share) the same conductive line (e.g.,252 ₀).

Each of conductive lines 250 ₀, 251 ₀, 252 ₀, and 253 ₀ can bestructured as a single conductive line (e.g., a single conductiveregion) that can be formed from conductive material (e.g., conductivelydoped polysilicon). During a memory operation of memory device 200,conductive lines 250 ₀, 251 ₀, 252 ₀, and 253 ₀ can receive respectivesignals WL0 ₀, WL1 ₀, WL2 ₀, and WL3 ₀ to access memory cells 210, 211,212, and 213 of selected memory cell strings.

Select transistors (e.g., drain select transistors) 264 of block 290 canbe coupled to select line (e.g., drain select line) 284 ₀. Selecttransistors 264 of block 290 can be controlled (e.g., turned on orturned off) by the same signal, such as signal SGD₀ (e.g., drain selectgate signal) on select line 284 ₀.

Select transistors (e.g., source select transistors) 261 of block 290can be coupled to a select line (e.g., source select line) 280 ₀. Selecttransistors 261 of block 290 can be controlled (e.g., turned on orturned off) by the same signal, such as signal SGS₀ (e.g., source selectgate signal) applied to select line 280 ₀.

As mentioned above, block 291 includes elements similar to those ofblock 290. For example, block 291 can include memory cell strings 230,231, and 232, and a group of conductive lines (e.g., local access linesor local word lines) 250 ₁, 251 ₁, 252 ₁, and 253 ₁ that can receiverespective signals WL0 ₁, WL1 ₁, WL2 ₁, and WL3 ₁ to access memory cells210, 211, 212, and 213 of selected memory cell strings in block 291. Inanother example, block 291 can include select transistors 261, selectline (e.g., source select line) 280 ₁ and corresponding signal SGS₁(e.g., source select gate signal), and select line (e.g., drain selectline) 284 ₁ and corresponding signal SGD₁ (drain select gate signal).

During a memory operation (e.g., a read or write operation) selecttransistors 264 of block 290 can be turned on (e.g., by activatingsignal SGD₀) to couple (e.g., electrically couple) memory cell strings230, 231, and 232 of block 290 to data lines 270, 271, and 272,respectively. When select transistors 264 of block 290 are turned onduring a particular memory operation, select transistors 264 of block291 can be turned off (e.g., by deactivating signal SGD₁) to decouple(e.g., electrically decouple) memory cell strings 230, 231, and 232 ofblock 291 from data lines 270, 271, and 272, respectively. This allowsmemory cell strings 230, 231, and 232 of either block 290 or block 291(e.g., one block at a time) to be electrically coupled to data lines270, 271, and 272 during a particular memory operation of memory device200.

During a memory operation, such as a read or write operation, selecttransistors 261 of block 290 can be turned on (e.g., by activatingsignal SGS₀) to couple (e.g., electrically couple) memory cell strings230, 231, and 232 of block 290 to line 299. When select transistors 261of block 290 are turned on during a particular memory operation, selecttransistors (e.g., source select transistors) 261 of block 291 can beturned off (e.g., by deactivating signal SGS₁) to decouple (e.g.,electrically decouple) memory cell strings 230, 231, and 232 of block291 from line 299.

Each of blocks 290 and 291 can have a unique block address (block-leveladdress) within memory device 200. During a memory operation (e.g.,read, write, or erase operation), only one of blocks 290 and 291 can beselected based on the block address. Memory device 200 can use anaddress register (which can be similar to address register 107 inFIG. 1) and row access circuitry (which can be similar to row accesscircuitry 108 in FIG. 1) to determine which block (e.g., either block290 or 291) of memory device 200 is selected to be accessed during aparticular memory operation. The block address of the selected blockduring a particular memory operation can be provided to memory device200 through lines (e.g., address lines) such as lines 103 of FIG. 1.Memory device 200 can activate (e.g., turn on) the driver circuit (e.g.,driver circuit 240 ₀) associated with the selected block (e.g., block290) to access the memory cells (e.g., selected memory cells) of theselected block. Memory device 200 can deactivate (e.g., turn off) thedriver circuit (e.g., driver circuit 240 ₁) associated with theunselected (e.g., deselected) block (e.g., block 291).

As shown in FIG. 2, driver circuit 240 ₀ can include a group oftransistors (e.g., high-voltage string driver transistor) T0.Transistors T0 can share a transistor gate 240 _(T0) (e.g., a commontransistor gate 240 _(T0), which is a transistor control gate shared bytransistors T0). Thus, transistors T0 can be controlled (e.g.,concurrently turned on or concurrently turned off) using the signal(e.g., voltage) on the same transistor gate 240 _(T0).

Driver circuit 240 ₁ can include a group of transistors (e.g.,high-voltage string driver transistor) T1. Transistors T1 can share atransistor gate 240 _(T1) (e.g., a common transistor gate 240 _(T1),which is a transistor control gate shared by transistors T1 anddifferent from transistor gate 240 _(T0)). Thus, transistors T1 can becontrolled (e.g., turned on at the same time or turned off at the sametime) using the signal (e.g., voltage) on the same transistor gate 240_(T1).

Memory device 200 can include conductive lines (e.g., global accesslines, such as, for example global word lines) 250′, 251′, 252′, 253′,and 254′ through 254 i′, each of which can be provided with (e.g., cancarry) a voltage (e.g., a voltage signal, which is different from a datasignal). As an example, conductive lines 250′, 251′, 252′, and 253′ canbe provided with voltages (e.g., voltage signals) V0, V1, V2, and V3,respectively. Each of conductive lines 250′. 251′, 252′, 253′, and 254′through 254 i′ can be structured with (e.g., formed from) a conductivematerial (e.g., conductively doped polysilicon, metal, or otherconductive materials).

As shown in FIG. 2, some (e.g., four) of transistors T0 can be coupledbetween conductive lines 250′, 251′, 252′, and 253′ and conductive lines250 ₀, 251 ₀, 252 ₀, and 253 ₀, respectively, of block 290. Some (e.g.,four) of transistors T1 can be coupled between conductive lines 250′,251′, 252′, and 253′ and conductive lines 250 ₁, 251 ₁, 252 ₁, and 253₁, respectively, of block 291.

For simplicity, FIG. 2 omits connections (e.g., conductive connections)between conductive lines 254′ through 254 i′ and some elements of blocks290 and 291. Such connections include connections between conductivelines 254′ through 254 i′ and select lines 280 ₀ and 284 ₀ (of block290), select lines 280 ₁ and 284 ₁ (of block 291), and line (e.g.,source line) 299.

Driver circuit 240 ₀ can use transistors T0 to provide (e.g., to pass)voltages from conductive lines 250′, 251′, 252′, 253′, and 254′ through254 i′ to respective elements of block 290. For example, driver circuit240 ₀ can use four of transistors T0 to provide voltages V0, V1, V2, andV3 from four corresponding conductive lines 250′, 251′, 252′, and 253′to four conductive lines 250 ₀, 251 ₀, 252 ₀, and 253 ₀, respectively.

Driver circuit 240 ₁ can use transistors T1 to provide (e.g., to pass)voltages from conductive lines 250′, 251′, 252′, 253′, and 254′ through254 i′ to respective elements of block 291. For example, driver circuit240 ₁ can use four of transistors T1 to provide voltages V0, V1, V2, andV3 from four corresponding conductive lines 250′, 251′, 252′, and 253′to four conductive lines 250 ₁, 251 ₁, 252 ₁, and 253 ₁, respectively,of block 291.

As shown in FIG. 2, transistor gates 240 _(T0) and 240 _(T1) areseparate from each other. Thus, driver circuits 240 ₀ and 240 ₁ canseparately use respective transistor gates 240 _(T0) and 240 _(T1)(e.g., separately activate respective signals BLKHVsel₀ and BLKHVsel₁)to control (e.g., turn on or turn off) transistors T0 and T1. Drivercircuits 240 ₀ and 240 ₁ can be activated one at a time during aparticular memory operation of memory device 200.

For example, during a memory operation of memory device 200, if block290 is selected to be accessed (e.g., to operate on memory cells 210,211, 212, and 213 of block 290) and block 291 is not selected(unselected) to be accessed, then signal BLKHVsel₀ can be activated bydriver select circuit 245 ₀ while signal BLKHVsel₁ is not activated(e.g., deactivated) by driver select circuit 245 ₁. In this example,transistors T0 can be turned on (while transistors T1 are turned off) toestablish circuit paths (e.g., current paths) between conductive lines250 ₀, 251 ₀, 252 ₀, and 253 ₀ of memory cell block 290 (e.g., theselected block) and conductive lines 250′, 251′, 252′, and 253′ (e.g.,through turned-on transistors T0), respectively. This allows voltagesV0, V1, V2, and V3 from respective conductive lines 250′, 251′, 252′,and 253′ to be applied to (e.g., to be passed to) respective conductivelines 250 ₀, 251 ₀, 252 ₀, and 253 ₀ of block 290 through turned-ontransistors T0. In this example, memory device 200 may establish nocircuit paths (e.g., establish no current paths) between conductivelines 250 ₁, 251 ₁, 252 ₁, and 253 ₁ of memory cell block 291 (e.g., theunselected block) and respective conductive lines 250′, 251′, 252′, and253′ (because transistors T1 are turned off). Thus, in this example,voltages V0, V1, V2, and V3 from respective conductive lines 250′, 251′,252′, and 253′ are not applied to (e.g., are not passed to) conductivelines 250 ₁, 251 ₁, 252 ₁, and 253 ₁ of block 291 because transistors T1are turned off.

In another example, during a memory operation of memory device 200, ifblock 291 (instead of block 290 as described in the above example) isselected to be accessed (e.g., to operate on memory cells 210, 211, 212,and 213 of block 291) and block 290 is not selected to be accessed, thensignal BLKHVsel₁ can be activated by driver select circuit 245 ₁ whilesignal BLKHVsel₀ is not activated (e.g., deactivated) by driver selectcircuit 245 ₀. In this example, transistors T1 can be turned on whiletransistors T0 are turned off. This allows voltages V0, V1, V2, and V3from respective conductive lines 250′, 251′, 252′, and 253′ to beapplied to (e.g., to be passed to) respective conductive lines 250 ₁,251 ₁, 252 ₁, and 253 ₁ of block 291 through turned-on transistors T1.In this example, voltages V0, V1, V2, and V3 from respective conductivelines 250′, 251′, 252′, and 253′ are not applied to (e.g., are notpassed to) conductive lines 250 ₀, 251 ₀, 252 ₀, and 253 ₀ becausetransistors T0 are turned off.

Each of driver select circuits 245 ₀ and 245 ₁ can include elements(e.g., transistors and capacitors) similar to (or identical to) theelements of driver select circuits described in more detail withreference to FIG. 3 through FIG. 8. Improvements and benefits of memorydevice 200 over some conventional memory devices are also discussedbelow with reference to FIG. 3 through FIG. 8.

FIG. 3 shows a schematic diagram of driver select circuit 245 ₀ ofmemory device 200 of FIG. 2, according to some embodiments describedherein. For simplicity, only driver select circuit 245 ₀ of memorydevice 200 of FIG. 2 is described in detail with respect to FIG. 3.Driver select circuit 245 ₁ of memory device 200 of FIG. 2 includeselements and operations similar to the elements and operations of driverselect circuit 245 ₀ shown in FIG. 3. Thus, detailed description ofdriver select circuit 245 ₁ of FIG. 2 is omitted from the descriptionherein.

As shown in FIG. 3, driver select circuit 245 ₀ can include transistors301, 302, 303, 304, and 305, and a capacitor C. Each of transistors 301,303, 304, and 305 can include an n-channel metal-oxide-semiconductor(NMOS) transistor. Transistor 302 can include a p-channelmetal-oxide-semiconductor (PMOS) transistor. Transistor 301 can includea depletion-mode NMOS transistor, such that transistor 301 can have anegative threshold voltage Vt (Vt<0). Transistor 303 can include adepletion-mode NMOS transistor, such that transistor 303 can have anegative threshold voltage Vt (Vt<0). Alternatively, transistor 303 caninclude an enhancement mode NMOS transistor.

As shown in FIG. 3, driver select circuit 245 ₀ can include nodes (e.g.,power supply nodes) 310, 311, 313, and 316 to receive voltages (e.g.,voltage signals) Vcc, V_(PGMSW), V_(BSTRAP), and V_(CLAMP),respectively, and nodes (e.g., enable signal nodes) 315 and 317 toreceive signals (e.g., enable signals) EN and EN*, respectively. SignalsEN and EN* can be complementary signals (e.g., signal EN* is an invertedversion of signal EN). Driver select circuit 245 ₀ can also include anode (e.g., high-voltage node) 340 to provide voltage BLKHVsel₀. Node340 can be coupled (electrically coupled) to transistor gate 240 _(T0)of transistors T0 (FIG. 2). Thus, node 340 of driver select circuit 245₀ and transistor gate 240 _(T0) can be the same node (e.g., can becoupled to the same conductive region (e.g., conductive path)).

In operation, if block 290 (FIG. 2) is selected to store information inat least one of memory cells 210, 211, 212, and 213 of block 290, thensignals EN and EN* can be provided with voltages (e.g., EN=Vcc, andEN*=0V) to turn on transistors 305 and 302, respectively. Transistors301 and 302 can operate to cause the value of voltage BLKHVsel′₀ at node312 to be based on (e.g., to increase up to) the value of voltageV_(PGMSW) at node 311. Transistor 304 can include a gate coupled to node340, a terminal (e.g., a non-gate terminal (e.g., a drain)) coupled tonode 313, and a terminal (e.g., a non-gate terminal (e.g., a source))coupled to node 314. Transistor 304 can operate to pass voltageV_(BSTRAP) to one conductive plate (e.g., the conductive plate coupledto node 314) of capacitor C. Capacitor C can operate as bootstrapcapacitor. Capacitor C and transistor 304 can operate to cause (toincrease (e.g., to bootstrap)) the value of voltage BLKHVsel₀ at node340 to be greater than the value of voltage BLKHVsel′₀ at node 312.Voltage V_(CLAMP) can have a value less than the value of voltageV_(PGMSW) by one threshold voltage value of transistor 303. This mayallow transistor 303 to form a conductive path from node 312 to node 340and also to prevent the voltage (e.g., BLKHVsel₀ of at least 29V) atnode 340 from drifting back to the voltage (e.g., BLKHVsel′₀=26V) atnode 312.

During a write operation of memory device 200, a relatively high valueof voltage BLKHVsel₀ at node 340 allows transistors T0 (FIG. 2) toproperly pass a voltage (e.g., a programming voltage) from a conductiveline (e.g., a selected global word line) among conductive lines (e.g.,global word lines) 250′, 251′, 252′, and 253′ to a respective conductiveline (e.g., a selected local word line) among conductive lines (e.g.,local word lines) 250 ₀, 251 ₀, 252 ₀, and 253 ₀. This allowsinformation to be properly stored in a memory cell (or memory cells) ofblock 290.

FIG. 4 is a timing diagram for some of the signals of memory device 200of FIG. 2 and some of the voltages shown in FIG. 3 during an examplewrite operation of memory device 200, according to some embodimentsdescribed herein. In the write operation associated with FIG. 4, it isassumed that block 290 (FIG. 2) is selected to store information (e.g.,block 291 is not selected to store information). In the write operationassociated with FIG. 4, it is also assumed that at least one of memorycells 212 (e.g., one memory cell 212 or multiple memory cells 212)associated with conductive line 252 ₀ (e.g., local word line) of FIG. 2is selected to be accessed (e.g., selected to store information). Thus,in this example, conductive line 252 ₀ (FIG. 2) can be called a selectedconductive line (e.g., selected local word line). In FIG. 4, signal WL2₀ is labeled “selected” to indicate that signal WL2 ₀ is associated withselected conductive line 252 ₀ (e.g., selected local word line).

In the example write operation of FIG. 4, other memory cells 210, 211,and 213 (FIG. 2) associated with conductive lines 250 ₀, 251 ₀, and 253₀, respectively, are unselected (e.g., not selected) memory cells (e.g.,memory cells that are not selected to store information). Thus, in thisexample, conductive lines 250 ₀, 251 ₀, and 253 ₀ (FIG. 2) can be calledunselected conductive lines (e.g., unselected local word lines). In FIG.4, signals WL0 ₀, WL1 ₀, and WL3 ₀ are labeled “unselected” to indicatethat signals WL0 ₀, WL1 ₀, and WL3 ₀ are associated with unselectedconductive lines 250 ₀, 251 ₀, and 253 ₀, respectively.

In the description herein, the values (e.g., voltage values) of voltagesbeing described (and shown in the drawings) are example values. However,actual values used in reality can be different from the values shown inFIG. 4.

In FIG. 4, times t0, t1, t2, and t3 indicate different times during theexample write operation. Information can be stored (e.g., programmed) ina selected memory cell (or memory cells) between times t2 and t3.

As shown in FIG. 4, voltages V0, V1, V2, and V3 associated withconductive lines 250′, 251′, 252′, and 253′ (FIG. 2) can be providedwith different values depending on which of conductive lines 250′, 251′,252′, and 253′ is a selected conductive line (e.g., selected global wordline). A selected conductive line (e.g., selected global word line)among conductive lines 250′, 251′, 252′, and 253′ is the conductive lineassociated with (e.g., coupled to) a selected conductive line (e.g.,selected local word line) among conductive lines 250 ₀, 251 ₀, 252 ₀,and 253 ₀ through one of transistors T0 (FIG. 2). Thus, in the examplewrite operation of FIG. 4, conductive line 252′ (FIG. 2) is a selectedconductive line (e.g., selected global word line). In FIG. 4, voltage V2is labeled “selected” to indicate that voltage V2 is associated withselected conductive line 252′ (e.g., selected global word line). Otherconductive lines 250′, 251′, and 253′ in the example write operation ofFIG. 4 can be called unselected conductive lines (e.g., unelected globalword lines). In FIG. 4, voltages V0, V1, and V3 are labeled “unselected”to indicate that voltages V0, V1, and V3 are associated with unselectedconductive lines 250′, 251′, and 253′ (e.g., unselected global wordlines).

As shown in FIG. 4, voltage V2 (e.g., associated with a selected globalword line) can be provided with a programming voltage V_(PRGM) (e.g.,V_(PRGM)=26V). Each of voltages V0, V1, and V3 (e.g., associated withunselected global word lines) can be provided with a voltage V_(PASS)(e.g., V_(PASS)=10V). Thus, during a write operation of memory device200, one of conductive lines 250′, 251′, 252′, and 253′ can be providedwith a voltage (e.g., V2=V_(PRGM)=26V) that has a highest value (e.g.,26V) among values of voltages (e.g., voltages V0=V1=V3=10V and V2=26V)received at respective conductive lines 250′, 251′, 252′, and 253′.

Voltage V_(PGMSW) can be based on programming voltage V_(PRGM) (e.g.,V_(PGMSW)=V_(PRGM)). For example, V_(PGMSW)=26V, which can be the sameas the value of voltage V2 (and the same as the value of programmingvoltage V_(PRGM)=26V). Thus, during a write operation of memory device200, the value of voltage V_(PGMSW) can be no greater than (at mostequal to) a highest value (e.g., the value of voltage V2) among valuesof the voltages (e.g., voltages V0=V1=V3=10V and V2=26V) received atrespective conductive lines 250′, 251′, 252′, and 253′.

FIG. 4 also shows labels V_(PGMSW)=V_(PRGM), V_(PGMSW)<V_(PRGM), andV_(PGMSW)>V_(PRGM) to indicate that the value of voltage V_(PGMSW) canalternatively be less than or greater than the value of programmingvoltage V_(PRGM).

Signals EN and EN* can be provided with 0V and the value of voltage Vcc,respectively, as shown in FIG. 4.

The value of voltage BLKHVsel′₀ is based on (e.g., follows) the value ofvoltage V_(PGMSW). As shown in FIG. 4, the value of voltage BLKHVsel′₀can go up to the value of voltage V_(PGMSW) (e.g., goes from 0V to 23V).

Voltage V_(CLAMP) can be provided with a value that is less than thevalue of voltage V_(PGMSW). For example, voltage V_(CLAMP) can beprovided with a value such that V_(CLAMP)=V_(PGMSW)+Vt (where Vt is thethreshold voltage of transistor 303 (FIG. 3)). As an example, ifV_(PGMSW)=26V and Vt=−3V, then V_(CLAMP)=26V+Vt=26V−3V=23V (as shown inFIG. 4).

Voltage V_(BSTRAP) can be provided with a value less than the value ofvoltage V_(CLAMP) and greater than the value of voltage Vcc. Forexample, the value of voltage V_(BSTRAP) can be 10V if the value ofvoltage Vcc is between 1V and 2V and the value of voltage V_(CLAMP)=23V.

Voltages provided to signals WL0 ₀, WL1 ₀, WL2 ₀, and WL3 ₀ can be basedon voltages V0, V1, V2, and V3, respectively. For example, the value ofa voltage on signal WL2 ₀ can be up to the value of programming voltageV_(PRGM). As an example, the value of a voltage on signal WL2 ₀ can goup to V_(PRGM)=V2=26V.

The value of a voltage on each of signals WL0 ₀, WL1 ₀, and WL3 ₀ can bebased on the value of voltage V_(PASS). As an example, the value of avoltage on each of signals WL0 ₀, WL1 ₀, and WL3 ₀ can go up toV_(PASS)=10V.

In the example write operation of FIG. 4, block 291 is not selected tostore information. Thus, driver circuit 240 ₁ (FIG. 2) can bedeactivated (e.g., by turning off transistors T1) by providing aturned-off value (e.g., 0V) to voltage BLKHVsel₁ between times t0 and t3(as shown in FIG. 4).

Voltage BLKHVsel₀ can depend on the values of voltage V_(PGMSW), voltageV_(CLAMP), threshold voltage Vt of transistor 303, and the capacitance(e.g., coupling capacitance) at node 340. Voltage BLKHVsel₀ can have avalue greater than the value of voltage V_(PGMSW), such that BLKHVsel₀can be at least (equal to or greater than) the sum of V_(PGMSW)+Vx,where Vx is at least the absolute value of the threshold voltage Vt oftransistor 303. For example, if the value of voltage V_(PGMSW) is 26V,and the value of threshold voltage Vt of transistor 303 is negative 3V(−3V), then the value of voltage BLKHVsel₀ can be 29V (26V+3V=29V) orgreater than 29V.

As shown in FIG. 4, as voltage V_(BSTSAP) ramps up (e.g., between timest2 and t3), voltage BLKHVsel₀ also ramps up through coupling. The amountof coupling can be dependent on the coupling ratio between capacitor C(FIG. 3) and the capacitance associated with transistors T0. The amountof coupling at node 340 can be proportional to the size (e.g., thecapacitance) of capacitor C. Thus, the larger the size of capacitor C,the higher the amount of coupling at node 340. As an example, if thecapacitance of capacitor C and the capacitance associated withtransistors T0 are equal, then the coupling ratio can be approximately50%. Thus, if capacitor C is formed from transistors and N=T (where N isthe number of transistors that form capacitor C, and T is the number oftransistors T0), then approximately 50% of voltage V_(BSTRAP) at node313 will contribute to (e.g., show up in) the value of voltage BLKHVsel₀at node 340. For example, if voltage V_(BSTRAP)=10V, then 5V (50% of10V) of voltage BLKHVsel₀ is from voltage V_(BSTRAP). In this example,if V_(PGMSW)=26V, then BLKHVsel′₀=26V, and BLKHVsel₀ can be increasedfrom 26V (the value of voltage BLKHVsel′₀) to 31V (26V+5V). Thus, inFIG. 4, the value of voltage BLKHVsel₀ can be 31V between times t2 andt3.

Using driver select circuit 245 ₀ of FIG. 2 and FIG. 3 and the voltagesshown in FIG. 4 allows memory device 200 (FIG. 2) to have improvementsand benefits over some conventional memory devices. Some suchimprovements and benefits are discussed below.

For example, some conventional memory devices may use a control voltage(e.g., a voltage similar to V_(PGMSW)) and programming voltage (e.g., avoltage similar to V2=V_(PGMSW)) during storing (programming)information in a memory cell. Such a control voltage in the conventionalmemory devices normally has a value (e.g., 29V) that is at least onethreshold voltage (e.g., one Vt of transistors similar to transistorsT0) greater than the value (e.g., 26V) of the programming voltage (e.g.,the voltage applied to a selected word line associated with the memorycell being programmed). In such conventional memory devices, generatingsuch a control voltage is unavoidably inefficient due to factors thatmay include junction loading each block in the memory device, androuting loading. Further, memory cell programming normally benefits froma relatively high programming voltage. However, in some conventionalmemory devices, providing such a high programming voltage can bechallenging due to constraints such as poor charge pump efficiency, andto breakdown of components (e.g., complementary-metal-oxidesemiconductor (CMOS) circuitries) needed to generate such a programmingvoltage.

In memory device 200, the value of voltage V_(PGMSW) at node 311 may bekept relatively low (e.g., 26V) in comparison to the value (e.g., 29V)of a similar voltage used in conventional memory devices. Although thevalue of voltage V_(PGMSW) is kept relatively low, the value of voltageBLKHVsel₀ applied to transistor gate 240 _(T0) can still be high enough(e.g., 29V or greater than 29V) to maintain proper operation of storinginformation in a memory cell in memory device 200. For example, thevalue of voltage V_(PGMSW) can be selected to be relatively low, such asless than (or equal to) the value of programming voltage V_(PRGM).Although the value of voltage V_(PGMSW) can be selected to be less thanor equal to the value of programming voltage V_(PRGM), the value ofvoltage V_(PGMSW) can also be selected to be greater than the value ofprogramming voltage V_(PRGM). For example, V_(PGMSW)=V_(PRGM)+Vz, whereVz can be less than, equal to, or greater than the value of thethreshold voltage of transistors T0.

The relatively low value of voltage V_(PGMSW) (e.g.,V_(PGMSW)<BLKHVsel₀) may improve efficiency in generating voltageV_(PGMSW) in comparison to generation of a similar voltage in someconventional memory devices. Further, the relatively low value ofvoltage V_(PGMSW) can reduce stress associated with generation ofvoltage V_(PGMSW) (e.g., reduce stress associated with a charge pump andsignal path to node 311) in comparison with generation of a similarvoltage in some conventional memory devices. Moreover, in comparisonwith some conventional memory devices, power consumption (e.g., supplycurrent Icc consumption) of memory device 200 may also be relatively lowdue to a relatively low value of voltage V_(PGMS)W. Additionally, sincethe value of voltage BLKHVsel₀ can be relatively high (e.g., greaterthan 29V) in comparison with some conventional memory devices, the valueof a voltage (e.g., V2=V_(PRGM)) used to program a memory cell in memorydevice 200 can be greater than the value of a conventional programmingvoltage (thereby improving programming operation of memory device 200)without exceeding current breakdown limits associated with programmingvoltage V_(PRGM).

FIG. 5 shows a schematic diagram of driver select circuit 545 ₀ that canbe a variation of driver select circuit 245 ₀ of FIG. 3, according tosome embodiments described herein. Driver select circuit 545 ₀ can beused for each of driver select circuit 245 ₀ and 245 ₁ of memory device200 of FIG. 2. Thus, each of driver select circuit 245 ₀ and 245 ₁ ofmemory device 200 of FIG. 2 can include either elements (e.g., circuitelements) of driver select circuit 245 ₀ of FIG. 3 (as described above)or elements (e.g., circuit elements) of driver select circuit 545 ₀ ofFIG. 5.

As shown in FIG. 5, driver select circuit 545 ₀ can include elementssimilar to or identical to the elements of driver select circuit 245 ₀of FIG. 3. Thus, for simplicity, similar or identical elements are giventhe same labels and their descriptions are not repeated. Differencesbetween driver select circuit 245 ₀ (FIG. 3) and driver select circuit545 ₀ (FIG. 5) include the omission of transistor 304, capacitor C, node313 (that receives voltage V_(BSTRAP)), and node 314.

As described above with reference to FIG. 3 and FIG. 4, transistor 304and capacitor C can operate to cause (e.g., to increase) the value ofvoltage BLKHVsel₀ at node 340 (FIG. 3) to be greater than the value ofvoltage BLKHVsel′₀ at node 312. The increased voltage (e.g., voltageBLKHVsel₀), as described above, allows proper operation of storinginformation in a memory cell (or memory cells) of block 290.

In FIG. 5, driver select circuit 545 ₀ does not include transistor 304and capacitor C. However, like driver select circuit 245 ₀ of FIG. 3,driver select circuit 545 ₀ of FIG. 5 can also operate to cause (toincrease (e.g., to bootstrap)) the value of voltage BLKHVsel₀ at node340 to be greater than the value of voltage BLKHVsel′₀ at node 312. Thevoltage increasing (e.g., bootstrapping) function in driver selectcircuit 545 ₀ can be performed by a “built-in” coupling capacitorstructure that is present in transistors T0 (FIG. 2). For example,during a write operation of storing information in block 290 (FIG. 2),the coupling capacitor structure between transistor gate 240 _(T0)(which is electrically coupled to node 340) and the body of transistorsT0 can cause (increase (e.g., bootstrap)) the value of voltage BLKHVsel₀at node 340 in FIG. 5 to be at a value that is greater than the value ofvoltage BLKHVsel′₀ at node 312 (FIG. 5).

FIG. 6 is a timing diagram for some of the signals of memory device 200of FIG. 2 and some of the voltages shown in FIG. 5 during an examplewrite operation of memory device 200 if driver select circuit 545 ₀ ofFIG. 5 is used as driver select circuit 245 ₀ of FIG. 2, according tosome embodiments described herein. The timing diagram of FIG. 6 issimilar to the timing diagram of FIG. 4. Thus, for simplicity, similaror identical elements (e.g., signals and voltages) in FIG. 4 and FIG. 6are given the same labels and their descriptions are not repeated.

Differences between FIG. 4 and FIG. 6 include the timing (e.g., timeintervals) at which voltages V0, V1, V2, and V3 from correspondingconductive lines 250′, 251′, 252′, and 253′ are applied to (e.g., passedto) respective conductive lines 250 ₀, 251 ₀, 252 ₀, and 253 ₀. Forexample, as shown in FIG. 6, the value of voltage BLKHVsel₀ increasesfrom 26V at time t2 (which is the same as the value of voltageBLKHVsel′₀=26V at time t2) to a value greater than 26V (e.g., 31V orgreater) after time t2 (e.g., between times t2 and t3). The value (e.g.,31V or greater) and timing of voltage BLKHVsel₀ of FIG. 6 can be similarto the value and timing, respectively, of voltage BLKHVsel₀ of FIG. 4.However, unlike FIG. 4, the values of voltages V0, V1, V2, and V3 inFIG. 6 can be maintained at 0V between times t0 and t2 and may not beallowed to increase until time t2. For example, as shown in FIG. 6,voltage V2 (e.g., associated with a selected global word line) starts toincrease from 0V at time t2 to 26V after time t2, and voltages V0, V1,and V3 (e.g., associated with unselected global word lines) start toincrease from 0V at time t2 to 10V after time t2.

Thus, as shown in FIG. 6, voltages V0, V1, V2, and V3 can be provided toconductive lines 250′, 251′, 252′, and 253′ after the value of voltageBLKHVsel₀ reaches (e.g., at time t2) the value of voltage BLKHVsel′₀. Incomparison, voltages V0, V1, V2, and V3 in FIG. 4 can be provided toconductive lines 250′, 251′, 252′, and 253′ before the value of voltageBLKHVsel₀ reaches (e.g., at time t2) the value of voltage BLKHVsel′₀.

Thus, as shown in FIG. 6, the application (e.g., passing) of voltagesV0, V1, V2, and V3 from corresponding conductive lines 250′, 251′, 252′,and 253′ to respective conductive lines 250 ₀, 251 ₀, 252 ₀, and 253 ₀can be delayed until after the value of voltage BLKHVsel₀ reaches thevalue of voltage BLKHVsel′₀ at time t2. As shown in FIG. 6, the value ofvoltage BLKHVsel′₀ can be at its highest value (e.g., 26V, which canalso be the highest value of voltage V_(PGMSW) at time t2). Delaying theapplication (e.g., the passing) of voltages V0, V1, V2, and V3 fromcorresponding conductive lines 250′, 251′, 252′, and 253′ to respectiveconductive lines 250 ₀, 251 ₀, 252 ₀, and 253 ₀ as described here allowsproper operation of the driver circuit (e.g., driver circuit 240 ₀ inFIG. 2) associated with a selected block during a write operation ofmemory device 200. In comparison with some conventional memory devices,driver select circuit 545 ₀ allows memory device 200 to haveimprovements and benefits similar to those of driver select circuit 245₀ described above with reference to FIG. 3 and FIG. 4.

FIG. 7 shows a structure of a portion of memory device 700 including astructure of capacitor C of driver select circuit 745 ₀, according tosome embodiments described herein. Memory device 700 can includeelements similar to (or identical to) the elements of memory device 200.For example, driver circuit 240 ₀ and driver select circuit 745 ₀ caninclude elements similar to (or identical to) the elements of drivercircuit 240 ₀ and driver select circuit 245 ₀, respectively, of FIG. 2.For simplicity, similar or identical elements between memory devices 200and 700 are given the same labels (e.g., same reference numbers). Alsofor simplicity and to not obscure the embodiments described herein, someof the elements of memory device 700 are schematically (instead ofstructurally) shown in FIG. 7. Such elements (shown schematically inFIG. 7) include driver circuit 240 ₀, and part of driver select circuit745 ₀ including transistor 304, node 313 (that receive voltageV_(BSTRAP)), node 314, and node 340. In FIG. 7, node 340 is labeledtwice for easy of following the connection of node 340 with othercircuit elements of memory device 700.

FIG. 7 shows a side view (in the x-z directions) of a structure of aportion of block 290 of memory device 700. As shown in FIG. 7, memorydevice 700 can include a substrate 790, which can be a semiconductorsubstrate. For example, substrate 790 can include an n-type or p-typesemiconductor material (e.g., an n-type or p-type silicon substrate).

Memory device 700 includes different levels (e.g., tiers) 709 through714 with respect to a z-direction, which extends in a direction of thethickness of substrate 790. FIG. 7 also shows an x-direction, which isperpendicular to the z-direction. Levels 709 through 714 are internalphysical levels (e.g., physical tiers arranged vertically in thez-direction) of memory device 700.

Memory device 700 can include a group of semiconductor structuresthrough 784 ₀ located in respective levels 709 through 714.Semiconductor structures 779 through 784 ₀ can be electrically separatelayers of semiconductor materials. Semiconductor structures 779 through784 ₀ can include conductively doped polysilicon (e.g., polysilicondoped with impurities (e.g., n-type or different types of impurities))or other conductively doped semiconductor materials. Thus, each ofsemiconductor structures 779 through 784 ₀ can include n-type (orp-type) polysilicon. Memory device 700 can also include dielectricmaterials (e.g., silicon dioxide) interleaved with (e.g., located in thespaces between the layers of) semiconductor structures 779 through 784₀. Such dielectric materials are not shown in FIG. 7 for simplicity.Each of semiconductor structures 779 through 784 ₀ can form portions ofrespective conductive lines (e.g., local access lines or local wordlines) 250 ₀, 251 ₀, 252 ₀, and 253 ₀ in block 290.

Memory device 700 can include a group of semiconductor structures 779′through 784′₀ located in respective levels 709 through 714.Semiconductor structures 779′ through 784′₀ can be electrically separatelayers of semiconductor materials. Semiconductor structures 779′ through784′₀ are electrically separated from (e.g., electrically uncoupled to)semiconductor structures 779 through 784′₀ by a gap 795. Thus, gap 795can be a location between semiconductor structures 779′ through 784′₀and semiconductor structures 779 through 784′₀. Gap 795 can be locatedat the edge of block 290. Gap 795 can be filled with dielectric material(e.g., silicon dioxide, not shown). Semiconductor structures 779 through784 ₀ and semiconductor structures 779′ through 784′₀ can be formed(e.g., deposited) from the same materials (e.g., the same semiconductormaterials) and the same process steps (e.g., formed at the same time).Gap 795 can be formed by removing (e.g., by cutting) a portion (e.g.,portion at gap 795) of the materials that form semiconductor structures779 through 784 ₀ and 779′ through 784′₀. Semiconductor structures 779′through 784′₀ may be an excess portion (e.g., an unused portion) of thematerials that form conductive lines 250 ₀, 251 ₀, 252 ₀, and 253 ₀.Thus, semiconductor structures 779′ through 784′₀ are not part ofconductive lines 250 ₀, 251 ₀, 252 ₀, and 253 ₀ of block 290. Asdescribed below, semiconductor structures 779′ through 784′₀ can be usedto form parts (e.g., conductive plates) of capacitor C (or a multiple ofcapacitor C) of driver select circuit 745 ₀ of memory device 700.

As shown in FIG. 7, memory cells 210, 211, 212, and 213 of memory cellstring 230 of block 290 can be located in levels 710, 711, 712, and 713,respectively (e.g., arranged vertically in the z-direction with respectto substrate 790). Memory cells 210, 211, 212, and 213 can be structuredas floating gate memory cells, charge trap memory cells, or other typesof non-volatile memory cells.

For simplicity, only two data lines 270 and 271 of memory device 700 areshown in FIG. 7. Data lines 270 and 271 can include conductive materialsthat are formed over semiconductor structures 779 through 784 ₀ (e.g.,formed above level 714 of memory device 700). Each of data lines 270 and271 can have a length extending in the y-direction that is perpendicularto the x-direction and z-direction.

Line (e.g., source) 299 of memory device 700 can include a conductivematerial and have a length extending in the x-direction. Source 299 canbe formed under semiconductor structures 779 through 784 ₀ (e.g., formedbelow level 709 of memory device 700). FIG. 7 shows an example wheresource 299 can be formed over a portion of substrate 790 (e.g., bydepositing a conductive material over substrate 790). Alternatively,source 299 can be formed in or formed on a portion of substrate 790(e.g., by doping a portion of substrate 790).

Driver circuit 240 ₀ of memory device 700 can be located in (e.g.,formed in or formed on) substrate 790 and below the level 709. Thus,driver circuit 240 ₀ can be formed under semiconductor structures 779through 784 ₀ (e.g., formed under the memory cell strings of memorydevice 700). For simplicity, connections between driver circuit 240 ₀and other components (e.g., conductive lines 250 ₀, 251 ₀, 252 ₀, and253 ₀) are not shown in FIG. 7. Substrate 790 can include othercircuitry (not shown in FIG. 7) of memory device 700 such as decoders,and sense and buffer circuitry.

As shown in FIG. 7, memory device 700 can include pillars (e.g.,vertical columns of materials) 730 and 731. Each of pillars 730 and 731can have a length extending through semiconductor structures 779 through784 ₀ in the z-direction. During processes of forming memory device 700,semiconductor structures 779 through 784 ₀ can be formed (e.g.,deposited one after another in the z-direction over substrate 790).Then, holes can be formed (e.g., vertically formed in the z-direction)through semiconductor structures 779 through 784 ₀. After the holes areformed, pillars 730 and 731 can be formed (e.g., vertically formed inthe z-direction) in the holes. As shown in FIG. 7, pillars 730 and 731can contact (e.g., can be electrically coupled to) source 299.

Pillar 730 can include a conductive material contacting data line 270and source 299. Pillar 730 can form part of a body of memory cell string230, and bodies of two respectively select transistors 261 and 264(e.g., source select transistor and drain select transistors,respectively) coupled to memory cell string 230. During a memoryoperation of memory device 700, pillar 730 can form a current path(e.g., a conductive channel) between data line 270 and source 299(through respective bodies of select transistors 261 and 264 and memorycell string 230).

Similarly, pillar 731 can include a conductive material contacting dataline 271 and source 299. Pillar 731 can form part of a body of memorycell string 231, and bodies of two respectively select transistors 261and 264 (e.g., source select transistor and drain select transistors,respectively) coupled to memory cell string 231. During a memoryoperation of memory device 700, pillar 731 can form a current path(e.g., a conductive channel) between data line 271 and source 299(through respective bodies of select transistors 261 and 264 and memorycell string 231).

As shown in FIG. 7, conductive lines 250 ₀, 251 ₀, 252 ₀, and 253 ₀(associated with signals WL0 ₀, WL1 ₀, WL2 ₀, and WL3 ₀) and respectivememory cells 210, 211, 212, and 213 can be located in levels 710, 711,712, and 713, respectively, along a portion (e.g., the segment extendingfrom level 710 to level 713) of each of pillars 730 and 731.

Select line (e.g., drain select line) 284 ₀ can be formed overconductive lines 250 ₀, 251 ₀, 252 ₀, and 253 ₀. Select line 284 ₀ canbe formed from a portion of semiconductor structure 784 ₀. As shown inFIG. 7, select line 284 ₀ and associated select transistors 264 can belocated along a portion (e.g., the segment at level 714) of each ofpillars 730 and 731.

Select line (e.g., source select line) 280 ₀ can be formed underconductive lines 250 ₀, 251 ₀, 252 ₀, and 253 ₀. Select line 280 ₀ canbe formed from a portion of semiconductor structure 779. As shown inFIG. 7, select line 280 ₀ and associated select transistors 261 can belocated along a portion (e.g., the segment at level 709) of each ofpillars 730 and 731.

As mentioned above, semiconductor structures 779′ through 784′₀ can beused to form parts (e.g., conductive plates) of capacitor C (or amultiple of capacitor C) of driver select circuit 745 ₀ of memory device700. Capacitor C can correspond to capacitor C of driver select circuit245 ₀ of FIG. 3. As shown in FIG. 7, capacitor C can include conductiveplates 760 and 761 that can be formed from two of semiconductorstructures 779′ through 784′₀. For example, conductive plates 760 and761 can be formed from semiconductor structures 782′ and 783′,respectively. The dielectric of capacitor C can be the dielectricmaterial (not labeled) between semiconductor structures 782′ and 783′.FIG. 7 shows an example where each of capacitor plates 760 and 761includes (e.g., can be formed from) a single (e.g., only one)semiconductor structure among semiconductor structures 779′ through784′₀. Alternatively, each of capacitor plates 760 and 761 can include(e.g., can be formed from) multiple semiconductor structures amongsemiconductor structures 779′ through 784′₀. For example, capacitorplate 760 can include (e.g., can be formed from) two or three ofsemiconductor structures 779′, 781′, and 783′ (e.g., odd layers ofsemiconductor structures 779′ through 784′₀) and capacitor plate 761 caninclude (e.g., can be formed from) two or three of semiconductorstructures 780′, 782′, and 784′ (e.g., even layers of semiconductorstructures 779′ through 784′₀). In this example, semiconductorstructures 781′ and 783′ (or 779′, 781′, and 783′) can be electricallycoupled (e.g., shorted) to each other to form capacitor plate 760, andsemiconductor structures 780′ and 782′ (or 780′, 782′, and 784′) can beelectrically coupled (e.g., shorted) to each other to form capacitorplate 761.

As shown in FIG. 7, conductive plates 760 and 761 of capacitor C can becoupled (e.g., electrically coupled) to other components of driverselect circuit 745 ₀ through conductive paths 760′ and 761′,respectively. For example, conductive paths 760′ and 761′ can be coupledto nodes 340 and 314, respectively. Each of conductive paths 760′ and761′ can include a combination of different portions that can includevertical and horizontal conductive segments (not labeled) as shown inFIG. 7. A horizontal conductive segment can have length extending in thex-direction (e.g., parallel to substrate 790). A vertical conductivesegment can have length extending in the z-direction (e.g.,perpendicular to substrate 790). As shown in FIG. 7, each of conductivepaths 760′ and 761′ can include a portion (e.g., a vertical conductivesegment) going through a location where gap 795 is located. The verticaland horizontal conductive segments of each of conductive paths 760′ and761′ can be formed from conductive material (e.g., conductively dopedpolysilicon, metal, or other conductive materials).

FIG. 7 shows memory device 700 including one capacitor C as an example.However, memory device 700 can include a multiple of capacitor C, eachwith a similar structure, that can be formed from semiconductorstructures 779′ through 784′₀ and the dielectric materials betweensemiconductor structures 779′ through 784′₀. In comparison with someconventional memory devices, memory device 700 can have improvements andbenefits similar to those of memory device 200 described above withreference to FIG. 2 through FIG. 4.

FIG. 8 shows a structure of a portion of a memory device 800 including astructure of a driver circuit 840 ₀ and a capacitor C of driver selectcircuit 845 ₀, according to some embodiments described herein. Memorydevice 800 can include elements similar to (or identical to) theelements of memory device 200. For example, driver circuit 840 ₀ anddriver select circuit 845 ₀ can include elements similar to (oridentical to) the elements of driver circuit 240 ₀ and driver selectcircuit 245 ₀, respectively, of FIG. 2. For simplicity, similar oridentical elements between memory devices 200 and 800 are given the samelabels (e.g., same reference numbers). Also for simplicity and to notobscure the embodiments described herein, some of the elements of memorydevice 800 are schematically (instead of structurally) shown in FIG. 8.Such elements (shown schematically in FIG. 8) part of driver selectcircuit 845 ₀ including transistor 304, node 313 (that receive voltageV_(BSTRAP)), node 314, and node 340. In FIG. 8, node 340 is labeledtwice for easy of following the connection of node 340 with othercircuit elements of memory device 800.

FIG. 8 shows a side view (in the x-z directions) of a structure of aportion of memory device 800 including a side view of a portion of block290. Part of the structure of memory device 800 is similar to (oridentical to) part of the structure of memory device 700. Thus, forsimplicity, similar or identical elements between memory devices 700 and800 are given the same labels (e.g., same reference numbers) and theirdescriptions are not repeated.

As shown in FIG. 8, memory device 800 can include conductive segments820 z, 821 z, 822 z, and 823 z (e.g., vertical segments extending in thez-direction) contacting respective conductive lines (e.g., local wordlines) 250 ₀, 251 ₀, 252 ₀, and 253 ₀, and conductive contacts 820 c,821 c, 822 c, and 823 c coupled to respective transistors T0 of drivercircuit 840 ₀. As shown in FIG. 8 and described below, transistors T0 ofpart of driver circuit 840 ₀ can be formed vertically with respect tosubstrate 790. Thus, driver circuit 840 ₀ can be called a verticalstring driver circuit (e.g., to access memory cell strings (e.g., 230and 231 in FIG. 8)) of block 290.

Memory device 800 can include a group of conductive structures (e.g.,electrically separated layers of conductive materials) 851 through 856and a group of conductive structures (e.g., electrically separatedlayers of conductive materials) 851′ through 856′ located in (e.g.,stacked vertically over) corresponding levels 815 through 820 of memorydevice 800. Levels 815 through 820 are above levels 709 through 714 withrespect to substrate 790. Conductive structures 851′ through 856′ areelectrically separated from (e.g., electrically uncoupled to) conductivestructures 851 through 856 by a gap 895. Thus, gap 895 can be a locationbetween conductive structures 851′ through 856′ and conductivestructures 851 through 856. Gap 895 can be filled with a dielectricmaterial (e.g., silicon dioxide, not shown). Conductive structures 851through 856 can be part of driver circuit 840 ₀₀f memory device 800.Conductive structures 851′ through 856′ can be used to form parts (e.g.,conductive plates) of capacitor C (or a multiple of capacitor C) ofdriver select circuit 845 ₀ of memory device 800.

Conductive structures 851 through 856 and 851′ through 856′ can includeconductively doped polysilicon (e.g., n-type or p-type polysilicon),metals, or other conductive materials. Memory device 800 can includedielectric materials (e.g., not labeled), interleaved with (e.g.,located in the spaces between) conductive structures 851 through 856.Memory device 800 can also include dielectric materials (e.g., notlabeled), interleaved with (e.g., located in the spaces between)conductive structures 851′ through 856′. Examples of such dielectricmaterials (interleaved with conductive structures 851 through 856 and851′ through 856′) include silicon dioxide.

Conductive structures 851 through 856 and 851′ through 856′ can beformed (e.g., deposited) from the same materials (e.g., semiconductormaterials (e.g., polysilicon)) and the same process steps (e.g., formedat the same time). Gap 895 can be formed by removing (e.g., by cutting)a portion (e.g., portion at gap 895) of the materials that formconductive structures 851 through 856 and 851′ through 856′.

As shown in FIG. 8, memory device 800 can include pillars 840 p, 841 p,842 p, and 843 p coupled to conductive lines 250 ₀, 251 ₀, 252 ₀, and253 ₀, respectively, through respective conductive contacts 820 c, 821c, 822 c, and 823 c and respective conductive segments 820 z, 821 z, 822z, and 823 z. Each of pillars 840 p, 841 p, 842 p, and 843 p can havelength extending in the z-direction (e.g., extending vertically withrespect to substrate 790) through conductive structures 851 through 856and through the dielectric materials (e.g., silicon dioxide) that areinterleaved with conductive structures 851 through 856. Pillars 840 p,841 p, 842 p, and 843 p can be part of (e.g., transistor bodies of)respective transistors T0 (transistors T0 are also schematically shownin FIG. 2). Part of conductive structures 851 through 856 can be used ascontrol gates (e.g., transistor gates) to control transistors T0 (e.g.,to concurrently turn on transistors T0 or to concurrently turn offtransistors T0). For simplicity, only four transistors T0 of driverselect circuit 845 ₀ are shown in FIG. 8. Other transistors T0 of driverselect circuit 845 ₀ (e.g., transistors T0 that are coupled to selectlines 280 ₀ and 284 ₀) are not shown in FIG. 8.

FIG. 8 shows portions (e.g., conductive regions) of conductive lines250′, 251′, 252′, and 253′ (to carry voltages V0, V1, V2, and V3,respectively) that can be formed over and contacting pillars 840 p, 841p, 842 p, and 843 p, respectively, of transistors T0. Memory device 800can include circuitry (e.g., charge pumps (not shown)) located insubstrate 790 to provide voltages V0, V1, V2, and V3 to respectiveconductive lines 250′, 251′, 252′, and 253′.

Memory device 800 can include connections (e.g., conductive connectionsthat can include conductive segments 851 z through 856 z, 851 x through856 x, and 856 u) to form conductive paths between respective conductivestructures 851 through 856 and driver select circuit 845 ₀. For example,memory device 800 can include a conductive connection that can includeconductive segments 856 z (e.g., a vertical segment in the z-direction),856 x (e.g., a horizontal segment in the x-direction), and 856 u (e.g.,a vertical segment in the z-direction) and conductive contact 856 ccoupled between conductive structure 856 and driver select circuit 845₀. Horizontal conductive segments 851 x through 855 x (and verticalconductive segments similar to conductive segment 856 u) coupled torespective conductive segments 851 z through 855 z are hidden from theview of FIG. 8.

As mentioned above, conductive structures 851′ through 856′ can be usedto form parts of capacitor C (or a multiple of capacitor C) of driverselect circuit 845 ₀. Capacitor C can correspond to capacitor C ofdriver select circuit 245 ₀ of FIG. 3. As shown in FIG. 8, capacitor Ccan include conductive plates 860 and 861 that can be formed from two ofconductive structures 851′ through 856′. For example, conductive plates860 and 861 can be formed from conductive structures 851′ and 852′,respectively. The dielectric of capacitor C can be the dielectricmaterial (not labeled) between conductive structures 851′ and 852′. FIG.8 shows an example where each of capacitor plates 860 and 861 includes(e.g., can be formed from) a single (e.g., only one) conductivestructure among conductive structures 851′ through 856′. Alternatively,each of capacitor plates 860 and 861 can include (e.g., can be formedfrom) multiple conductive structures among conductive structures 851′through 856′. For example, capacitor plate 860 can include (e.g., can beformed from) two or three of conductive structures 851′, 853′, and 855′(e.g., odd layers of conductive structures 851′ through 856′) andcapacitor plate 861 can include (e.g., can be formed from) two or threeof conductive structures 852′, 854′, and 856′ (e.g., even layers ofconductive structures 851′ through 856′). In this example, conductivestructures 851′ and 853′ (or 851′, 853′, and 855′) can be electricallycoupled (e.g., shorted) to each other to form capacitor plate 860, andconductive structures 852′ and 854′ (or 852′, 854′, and 856′) can beelectrically coupled (e.g., shorted) to each other to form capacitorplate 861.

As shown in FIG. 8, conductive plates 860 and 861 of capacitor C can becoupled (e.g., electrically coupled) to other components of driverselect circuit 845 ₀ through conductive paths 860′ and 861′,respectively. For example, conductive paths 860′ and 861′ can be coupledto nodes 340 and 314, respectively. Each of conductive paths 860′ and861′ can include a combination of different portions that can includevertical and horizontal conductive segments (not labeled) as shown inFIG. 8. A horizontal conductive segment can have length extending in thex-direction (e.g., parallel to substrate 790). A vertical conductivesegment can have length extending in the z-direction (e.g.,perpendicular to substrate 790). As shown in FIG. 8, each of conductivepaths 860′ and 861′ can include a portion (e.g., a vertical conductivesegment) going through a location where gap 895 is located. The verticaland horizontal conductive segments of each of conductive paths 860′ and861′ can be formed from conductive material (e.g., conductively dopedpolysilicon, metal, or other conductive materials).

FIG. 8 shows memory device 800 including one capacitor C as an example.However, memory device 800 can include a multiple of capacitor C, eachwith a similar structure, that can be formed from conductive structures851′ through 856′ (and the dielectric materials between conductivestructures 851′ through 856′). In comparison with some conventionalmemory devices, memory device 800 can have improvements and benefitssimilar to those of memory device 200 described above with reference toFIG. 2 through FIG. 4

The illustrations of apparatuses (e.g., memory devices 100, 200, 700,and 800) and methods (e.g., operating methods associated with memorydevices 100, 200, 700, and 800) are intended to provide a generalunderstanding of the structure of various embodiments and are notintended to provide a complete description of all the elements andfeatures of apparatuses that might make use of the structures describedherein. An apparatus herein refers to, for example, either a device(e.g., any of memory devices 100, 200, 700, and 800) or a system (e.g.,a computer, a cellular phone, or other electronic systems) that includesa device such as any of memory devices 100, 200, 700, and 800.

Any of the components described above with reference to FIG. 1 throughFIG. 8 can be implemented in a number of ways, including simulation viasoftware. Thus, apparatuses (e.g., memory devices 100, 200, 700, and 800or part of each of these memory devices, including a control unit inthese memory devices, such as control unit 118 (FIG. 1)) described abovemay all be characterized as “modules” (or “module”) herein. Such modulesmay include hardware circuitry, single- and/or multi-processor circuits,memory circuits, software program modules and objects and/or firmware,and combinations thereof, as desired and/or as appropriate forparticular implementations of various embodiments. For example, suchmodules may be included in a system operation simulation package, suchas a software electrical signal simulation package, a power usage andranges simulation package, a capacitance-inductance simulation package,a power/heat dissipation simulation package, a signaltransmission-reception simulation package, and/or a combination ofsoftware and hardware used to operate or simulate the operation ofvarious potential embodiments.

Memory devices 100, 200, 700, and 800 may be included in apparatuses(e.g., electronic circuitry) such as high-speed computers, communicationand signal processing circuitry, single- or multi-processor modules,single or multiple embedded processors, multicore processors, messageinformation switches, and application-specific modules includingmultilayer, multichip modules. Such apparatuses may further be includedas subcomponents within a variety of other apparatuses (e.g., electronicsystems), such as televisions, cellular telephones, personal computers(e.g., laptop computers, desktop computers, handheld computers, tabletcomputers, etc.), workstations, radios, video players, audio players(e.g., MP3 (Motion Picture Experts Group, Audio Layer 3) players),vehicles, medical devices (e.g., heart monitor, blood pressure monitor,etc.), set top boxes, and others.

The embodiments described above with reference to FIG. 1 through FIG. 8include apparatuses, and methods of operating the apparatuses. Some ofthe apparatuses include a first memory cell string; a second memory cellstring; a first group of conductive lines to access the first and secondmemory cell strings; a second group of conductive lines; a group oftransistors, each transistor of the group of transistors coupled betweena respective conductive line of the first group of conductive lines anda respective conductive line of the second group of conductive lines,the group of transistors having a common gate; and a circuit including afirst transistor and a second transistor coupled in series between afirst node and a second node, the first transistor including a gatecoupled to the second node, and a third transistor coupled between thesecond node and the common gate. Other embodiments including additionalapparatuses and methods are described.

In the detailed description and the claims, a list of items joined bythe term “one of” can mean only one of the listed items. For example, ifitems A and B are listed, then the phrase “one of A and B” means A only(excluding B), or B only (excluding A). In another example, if items A,B, and C are listed, then the phrase “one of A, B, and C” means A only,B only, or C only. Item A can include a single element or multipleelements. Item B can include a single element or multiple elements. ItemC can include a single element or multiple elements.

In the detailed description and the claims, a list of items joined bythe term “at least one of” can mean any combination of the listed items.For example, if items A and B are listed, then the phrase “at least oneof A and B” means A only, B only, or A and B. In another example, ifitems A, B, and C are listed, then the phrase “at least one of A, B, andC” means A only; B only; C only; A and B (excluding C); A and C(excluding B); B and C (excluding A); or all of A. B. and C. Item A caninclude a single element or multiple elements. Item B can include asingle element or multiple elements. Item C can include a single elementor multiple elements.

The above description and the drawings illustrate some embodiments ofthe inventive subject matter to enable those skilled in the art topractice the embodiments of the inventive subject matter. Otherembodiments may incorporate structural, logical, electrical, process,and other changes. Examples merely typify possible variations. Portionsand features of some embodiments may be included in, or substituted for,those of others. Many other embodiments will be apparent to those ofskill in the art upon reading and understanding the above description.

What is claimed is:
 1. An apparatus comprising: a first group ofsemiconductor structures located in different levels of the apparatusand located over a substrate; a pillar extending through the first groupof semiconductor structures, the pillar being part of a memory cellstring; a second group of semiconductor structures located in thedifferent levels, the second group of semiconductor structures beingelectrically separated from the first group of semiconductor structures;a capacitor including a first conductive plate formed from part of afirst semiconductor structure of the second group of semiconductorstructures, and a second conductive plate formed from part of a secondsemiconductor structure of the second group of semiconductor structures;a first conductive path coupled between the first conductive plate ofthe capacitor and a first node; a second conductive path coupled betweenthe second conductive plate of the capacitor and a second node; a firsttransistor and a second transistor coupled in series between a thirdnode and a fourth node, the first transistor including a gate directlycoupled to the fourth node; a third transistor including a firstterminal directly coupled to the fourth node and a second terminaldirectly coupled to the first node; and a fourth transistor having agate directly coupled to the first node and a terminal coupled to thesecond conductive plate of the capacitor.
 2. The apparatus of claim 1,wherein each of the first and second groups of semiconductor structuresincludes conductively doped polysilicon.
 3. The apparatus of claim 1,wherein each of the first and third transistors includes adepletion-mode transistor.
 4. The apparatus of claim 1, furthercomprising a group of transistors having a common gate coupled to thefirst node.
 5. An apparatus comprising: a first group of semiconductorstructures located in different levels of the apparatus and located overa substrate; a pillar extending through the first group of semiconductorstructures, the pillar being part of a memory cell string; a secondgroup of semiconductor structures located in the different levels, thesecond group of semiconductor structures being electrically separatedfrom the first group of semiconductor structures; a capacitor includinga first conductive plate formed from part of a first semiconductorstructure of the second group of semiconductor structures, and a secondconductive plate formed from part of a second semiconductor structure ofthe second group of semiconductor structures; a first conductive pathcoupled between the first conductive plate of the capacitor and a firstnode; a second conductive path coupled between the second conductiveplate of the capacitor and a second node; a first transistor and asecond transistor coupled in series between a third node and a fourthnode, the first transistor including a gate coupled to the fourth node;and a third transistor coupled between the fourth node and the firstnode, wherein: the first conductive path includes a first conductivesegment going through a location between the first group ofsemiconductor structures and the second group of semiconductorstructures; and the second conductive path includes a second conductivesegment going through the location between the first group ofsemiconductor structures and the second group of semiconductorstructures.
 6. The apparatus of claim 5, wherein: the first conductivepath includes a first additional conductive segment coupled to the firstconductive segment, the first additional conductive segment having alength extending perpendicularly to the first conductive segment; andthe second conductive path includes a second additional conductivesegment coupled to the second conductive segment, the second additionalconductive segment having a length extending perpendicularly to thesecond conductive segment.
 7. An apparatus comprising: a group ofsemiconductor structures located in different levels of the apparatusand over a substrate; a pillar extending through the group ofsemiconductor structures, the pillar being part of a memory cell string;a group of conductive structures located over the group of semiconductorstructures, the group of conductive structures being electricallyseparated from the group of semiconductor structures; a capacitorincluding a first conductive plate formed from part of a firstconductive structure of the group of conductive structures, and secondconductive plate formed from part of a second conductive structure ofthe group of conductive structures; a first conductive path coupledbetween the first conductive plate of the capacitor and a first node; asecond conductive path coupled between the second conductive plate ofthe capacitor and a second node; a first transistor and a secondtransistor coupled in series between a third node and a fourth node, thefirst transistor including a gate directly coupled to the fourth node; athird transistor including a first terminal directly coupled to thefourth node and a second terminal directly coupled to the second node;and a fourth transistor having a gate directly coupled to the first nodeand a terminal coupled to the second conductive plate of the capacitor.8. The apparatus of claim 7, wherein each of the group of semiconductorstructures and the group of conductive structures includes conductivelydoped polysilicon.
 9. The apparatus of claim 7, wherein each of thefirst and third transistors includes a depletion-mode transistor. 10.The apparatus of claim 7, further comprising: a fourth transistorcoupled between the first node and a fifth node.
 11. An apparatuscomprising: a group of semiconductor structures located in differentlevels of the apparatus and over a substrate; a pillar extending throughthe group of semiconductor structures, the pillar being part of a memorycell string; a group of conductive structures located over the group ofsemiconductor structures, the group of conductive structures beingelectrically separated from the group of semiconductor structures; acapacitor including a first conductive plate formed from part of a firstconductive structure of the group of conductive structures, and secondconductive plate formed from part of a second conductive structure ofthe group of conductive structures; a first conductive path coupledbetween the first conductive plate of the capacitor and a first node; asecond conductive path coupled between the second conductive plate ofthe capacitor and a second node; a first transistor and a secondtransistor coupled in series between a third node and a fourth node, thefirst transistor including a gate coupled to the fourth node; a thirdtransistor coupled between the fourth node and the second node; anadditional group of conductive structures located in the levels that thegroup of conductive structures is located; and an additional pillarextending through the additional group of conductive structures, theadditional pillar being electrically coupled to a semiconductorstructure of the group of semiconductor structures.
 12. The apparatus ofclaim 11, wherein: the first conductive path includes a first conductivesegment going through a location between the group of conductivestructures and the additional group of conductive structures; and thesecond conductive path includes a second conductive segment goingthrough the location between the group of conductive structures and theadditional group of conductive structures.
 13. The apparatus of claim12, wherein: the first conductive path includes a first additionalconductive segment coupled to the first conductive segment, the firstadditional conductive segment having a length extending perpendicularlyto the first conductive segment; and the second conductive path includesa second additional conductive segment coupled to the second conductivesegment, the second additional conductive segment having a lengthextending perpendicularly to the second conductive segment.